| 摘要 |
PROBLEM TO BE SOLVED: To provide a solar battery that can reduce the cost without greatly reducing the conversion efficiency.SOLUTION: A solar battery 10 contains a first electrode layer 12, a second electrode layer 15, a p-type semiconductor layer 13 disposed between the first and second electrode layers 12 and 15, and an n-type semiconductor layer 14 disposed between the p-type semiconductor layer 13 and the second electrode layer 15. The p-type semiconductor layer 13 comprises a compound semiconductor that contains Ib, IIIb and VIb group elements, and has a chalcopyrite structure. The p-type semiconductor layer 13 contains In and Ga as the IIIb group element. The thickness of the p-type semiconductor layer 13 ranges from 0.5 to 0.7 μm. The ratio Ga/(Ga+In) in the p-type semiconductor layer 13 increases from the n-type semiconductor layer 14 side to the electrode layer 12 side. The ratio Ga/(Ga+In) in the principal surface on the n-type semiconductor layer 14 side ranges from 0.225 to 0.325. The ratio Ga/(Ga+In) in the principal surface on the electrode layer 12 side ranges from 0.375 to 0.542.SELECTED DRAWING: Figure 1 |
