MAGNETIC MEMORY DEVICES AND METHODS OF FORMING THE SAME

摘要

The inventive concepts provide magnetic memory devices and methods forming the same. The method includes sequentially forming a first magnetic conductive layer and a capping layer on a substrate, patterning the capping layer and the first magnetic conductive layer to form a first magnetic conductive pattern and a capping pattern, forming an interlayer insulating layer exposing the capping pattern on the substrate, removing the capping pattern to expose the first magnetic conductive pattern, forming a tunnel barrier layer and a second magnetic conductive layer on the first magnetic conductive pattern and the interlayer insulating layer, and patterning the second magnetic conductive layer and the tunnel barrier layer to form a second magnetic conductive pattern and a tunnel barrier pattern.

主权项

1. A semiconductor device comprising:
a contact plug pattern in a first interlayer dielectric layer formed on a substrate, top surfaces of the contact plug pattern and the first interlayer dielectric layer being substantially coplanar; a first electrode pattern on the contact plug pattern and conductively coupled to the contact plug pattern; a first magnetic conductive pattern on the first electrode pattern; a second magnetic conductive pattern on the first magnetic conductive pattern; a tunnel barrier pattern between the first magnetic conductive pattern and the second magnetic conductive pattern and having a first surface on which the second magnetic conductive pattern is formed and a second surface that is opposite the first surface; and a metal oxide layer on a portion of the second surface of the tunnel barrier pattern that does not contact the first magnetic conductive pattern and on a side surface of the first magnetic conductive pattern.