SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device includes a semiconductor substrate including a plane portion expanding in a first direction and a second direction perpendicular to the first direction, and a pillar portion formed on an upper surface of the plane portion and extending in a stacking direction, a first gate electrode formed on a first gate insulating layer on a lower side surface of the pillar portion, and extending in the first direction, a second gate electrode formed on a second gate insulating layer on an upper side surface of the pillar portion, and extending in the second direction, a variable-resistance element formed on an upper surface of the pillar portion, and an interconnection formed on an upper surface of the variable-resistance element.

主权项

1. A semiconductor memory device comprising:
a semiconductor substrate including a plane portion expanding in a first direction and a second direction perpendicular to the first direction, a fin portion formed on an upper surface of the plane portion and expanding in the first direction and a stacking direction, and a pillar portion formed on an upper surface of the fin portion and extending in the stacking direction; a first gate electrode formed on a first gate insulating layer on a side surface of the fin portion, and extending in the first direction; a second gate electrode formed on a second gate insulating layer on a side surface of the pillar portion, and extending in the second direction; a variable-resistance element formed on an upper surface of the pillar portion; and an interconnection formed on an upper surface of the variable-resistance element.