| 摘要 |
PROBLEM TO BE SOLVED: To provide atomic layer deposition process formation for silicon oxide at temperature above 500°C.SOLUTION: A silicon precursor used has formula RRSi(NRR)X(R, Rand Rare each hydrogen, a linear or branched C-Calkyl group, or a C-Caryl group; Ris a linear or branched C-Calkyl group, a C-Caryl group, or a C-Calkylsilyl group; Rand Rare linked or not linked; X is Cl, Br or I; m is 0-3; n is 0-2; p is 0-2; and m+n+p=3), or RRSi(OR)(OR)X(Rand Rare each hydrogen, a linear or branched C-Calkyl group, or a C-Caryl group; Rand Rare each a linear or branched C-Calkyl group or a C-Caryl group; Rand Rare linked or not linked; X is Cl; Br or I; m is 0-3; n is 0-2; q is 0-2; p is 0-2; and m+n+q+p=3).SELECTED DRAWING: Figure 1 |
