发明名称 METHOD OF PERMANENTLY BONDING WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for performing careful manufacturing that can establish permanent binding having possibly maximum binding power at possibly low temperature.SOLUTION: A method of bonding a first contact surface 3 of a first board to a second contact surface 4 of a second board 2 in the following order, comprises: a step of forming a reservoir portion 5 in a surface layer 6 on the first contact surface 3, the surface layer 6 being mainly formed of native oxide; a step of partially filling the reservoir portion 5 with first starting raw material or a first group of the starting raw material; a step of bringing the first contact surface 3 into contact with the second contact surface 4 to form pre-bond binding; and a step of forming permanent binding between the first and second contact surfaces 3, 4 which is at least partially reinforced by reaction of the first starting raw material with second starting raw material contained in a reaction layer 7 of the second board 2.SELECTED DRAWING: Figure 5
申请公布号 JP2016027666(A) 申请公布日期 2016.02.18
申请号 JP20150193700 申请日期 2015.09.30
申请人 EV GROUP E THALLNER GMBH 发明人 THOMAS PLACH;KURT HINGERL;WIMPLINGER MARKUS;CHRISTOPH FLOETGEN
分类号 H01L21/02;B23K20/00 主分类号 H01L21/02
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