| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a small occupation area and a high integration degree.SOLUTION: A semiconductor device has an oxide semiconductor layer, an electrode layer and a contact plug. The electrode layer has one edge which contacts the oxide semiconductor layer and the other edge opposite to the one edge. The other edge has a semicircular notch when viewed from a top face and each contact plug is formed to contact the semicircular notch.SELECTED DRAWING: Figure 1 |
| 申请公布号 |
JP2016027652(A) |
申请公布日期 |
2016.02.18 |
| 申请号 |
JP20150133671 |
申请日期 |
2015.07.02 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KURATA MOTOMU;HODO RYOTA;SASAGAWA SHINYA;HATA YUUKI |
| 分类号 |
H01L29/786;H01L21/768;H01L21/8234;H01L21/8238;H01L21/8242;H01L23/522;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L27/10;H01L27/108 |
主分类号 |
H01L29/786 |
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