发明名称 VIA PRE-FILL ON BACK-END-OF-THE-LINE INTERCONNECT LAYER
摘要 In some embodiments, the present disclosure relates to a conductive interconnect layer. The conductive interconnect layer has a dielectric layer disposed over a substrate. An opening with an upper portion above a horizontal plane and a lower portion below the horizontal plane extends downwardly through the dielectric layer. A first conductive layer fills the lower portion of the opening. An upper barrier layer is disposed over the first conductive layer covering bottom and sidewall surfaces of the upper portion of the opening. A second conductive layer is disposed over the upper barrier layer filling the upper portion of the opening.
申请公布号 US2016049373(A1) 申请公布日期 2016.02.18
申请号 US201514926469 申请日期 2015.10.29
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Peng Chao-Hsien;Kuo Chi-Liang;Lee Ming-Han;Lee Hsiang-Huan;Shue Shau-Lin
分类号 H01L23/532;H01L23/522;H01L23/528;H01L21/768 主分类号 H01L23/532
代理机构 代理人
主权项 1. A conductive interconnection layer, comprising: a dielectric layer disposed over a substrate and having an opening comprising a lower portion and an upper portion; a first conductive layer arranged within the lower portion of the opening; a lower barrier layer continuously surrounding the first conductive layer; an upper barrier layer arranged along bottom and sidewall surfaces of the upper portion of the opening; and a second conductive layer disposed within the upper portion of the opening over the upper barrier layer, wherein the upper barrier layer and the lower barrier layer are arranged between the first conductive layer and the second conductive layer.
地址 Hsin-Chu TW