发明名称 |
PHASE CHANGING ON-CHIP THERMAL HEAT SINK |
摘要 |
A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip. |
申请公布号 |
US2016049352(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201514928206 |
申请日期 |
2015.10.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DAHLSTROM Mattias E. |
分类号 |
H01L23/367;H01L23/373;H01L23/522;H01L23/532;H01L23/427;H01L23/528 |
主分类号 |
H01L23/367 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor structure, comprising:
a device on a substrate of an integrated circuit chip; a heat sink proximate to the device; a liner encapsulating the core; and an external heat sink thermally connected to the heat sink, wherein the heat sink comprises a core composed of a phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip. |
地址 |
Armonk NY US |