Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.
申请公布号
WO2016024177(A1)
申请公布日期
2016.02.18
申请号
WO2015IB55608
申请日期
2015.07.24
申请人
BASF SE;BASF (CHINA) COMPANY LIMITED
发明人
LAN, YONGQING;NOLLER, BASTIAN MARTEN;JIANG, LIANG;SHEN, DANIEL KWO-HUNG;GOLZARIAN, REZA;LI, YUZHUO