| 摘要 |
A photosensor pixel includes a thin film transistor (TFT) and a metal-insulator- semiconductor (MIS) photodetector. The TFT includes a gate, a gate insulator layer, a semiconductor layer forming a channel region, a drain, and a source. The MIS photodetector includes a transparent conductor layer, a semiconductor layer including a photosensitive semiconductor, and an insulator layer between the transparent conductor layer and the semiconductor layer. The semiconductor layer of the MIS photodetector is connected to the source or the drain of the TFT, and the thickness of the insulator layer of the MIS photodetector is less than the thickness of the gate insulator layer of the TFT. |
