INTEGRATED CIRCUIT CHIPS HAVING FIELD EFFECT TRANSISTORS WITH DIFFERENT GATE DESIGNS

摘要

Provided is an integrated circuit chip. The integrated circuit chip includes a semiconductor substrate, a first back-end-of-line (BEOL) loaded unit circuit that includes a first field effect transistors (FET) group, and a second gate-loaded unit circuit that includes a second field effect transistors group. The first FET group includes a first transistor and the second FET group includes a second transistor. A bottom surface of a gate electrode of the first transistor extends closer to a bottom surface of the semiconductor substrate than does a bottom surface of a gate electrode of the second transistor.