发明名称 OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide: an optical semiconductor device which enables the reduction in carrier diffusion into an active layer; and a method for manufacturing such an optical semiconductor device.SOLUTION: An optical semiconductor device 1A comprises: a semiconductor substrate 11 as an n-type clad layer; an active layer 12 formed on the semiconductor substrate 11; a p-type clad layer 14 formed on the active layer 12; a pair of block regions 16a and 16b arrayed in a direction crossing a laminating direction, between which the p-type clad layer 14 is located; and a p-type clad layer 17 formed on the p-type clad layer 14 and the pair of block regions 16a and 16b. In the p-type clad layer 14, the carrier concentration is higher than the carrier concentration in the p-type clad layer 17.SELECTED DRAWING: Figure 1
申请公布号 JP2016027653(A) 申请公布日期 2016.02.18
申请号 JP20150135972 申请日期 2015.07.07
申请人 SUMITOMO ELECTRIC DEVICE INNOVATIONS INC 发明人 WATANABE TAKAYUKI
分类号 H01S5/042;H01S5/22;H01S5/343 主分类号 H01S5/042
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