| 摘要 |
The invention relates to a device for etching a substrate and to a method for operating a device according to the invention. The device comprises: a first reaction chamber into which a first gas can be introduced; a second reaction chamber into which a second gas can be introduced; a coil device by means of which an electromagnetic alternating field can be generated; wherein at least one first reactive species can be generated by applying the electromagnetic alternating field to the first gas and at least one second reactive species can be generated by applying the electromagnetic alternating field to the second gas; a separating device by means of which a direct gas exchange between the first reaction chamber and the second reaction chamber is prevented; an etching chamber for receiving the substrate to be anisotropically etched; and a mixing device which is arranged and designed such that the reactive species enter the mixing device, are mixed together, and in the mixed state act on the substrate so as to anisotropically etch same in the etching chamber. |
