发明名称 CAPACITOR STRUCTURE IN AN INTEGRATED CIRCUIT
摘要 In an example, a capacitor in an integrated circuit (IC), includes: a first finger capacitor formed in at least one layer of the IC having a first bus and a second bus; a second finger capacitor formed in the at least one layer of the IC having a first bus and a second bus, where a longitudinal edge of the second bus of the second finger capacitor is adjacent a longitudinal edge of the first bus of the first finger capacitor and separated by a dielectric gap; and a first metal segment formed on a first layer above the at least one layer, the first metal segment being electrically coupled to the first bus of the first finger capacitor and increasing a width and a height of the first bus of the first finger capacitor.
申请公布号 US2016049393(A1) 申请公布日期 2016.02.18
申请号 US201414460292 申请日期 2014.08.14
申请人 XILINX, INC. 发明人 Jing Jing;Wu Shuxian
分类号 H01L27/08;H01L49/02 主分类号 H01L27/08
代理机构 代理人
主权项 1. A capacitor in an integrated circuit (IC), comprising: a first finger capacitor formed in at least one layer of the IC having a first bus, a second bus, first fingers, and second fingers, the first fingers of the first finger capacitor electrically coupled to the first bus of the first finger capacitor and interdigitated with the second fingers of the first finger capacitor, which are electrically coupled to the second bus of the first finger capacitor; a second finger capacitor formed in the at least one layer of the IC having a first bus, a second bus, first fingers, and second fingers, the first fingers of the second finger capacitor electrically coupled to the first bus of the second finger capacitor and interdigitated with the second fingers of the second finger capacitor, which are electrically coupled to the second bus of the second finger capacitor, where a longitudinal edge of the second bus of the second finger capacitor is adjacent a longitudinal edge of the first bus of the first finger capacitor and separated by a dielectric gap; and a first metal segment formed on a first layer above the at least one layer, the first metal segment being electrically coupled to the first bus of the first finger capacitor and increasing a width and a height of the first bus of the first finger capacitor.
地址 San Jose CA US
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