| 摘要 |
The invention relates to an optoelectronic semiconductor chip (1) comprising a support substrate (11), a semiconductor layer sequence (2) which has a mesa structure, a reflective layer (6) which is arranged between the support substrate (11) and the semiconductor layer sequence (2) and which has silver, a dielectric encapsulation layer (8) which is arranged at least partly between the semiconductor layer sequence (2) and the support substrate (11), said encapsulation layer (8) being arranged laterally adjacent to the reflective layer (6) and extending in a lateral direction into a region adjoining the mesa structure, and a dielectric transparent cover layer (18) that at least partly covers an encapsulation layer (8) region, which is arranged adjacently to the mesa structure, and the semiconductor layer sequence (2). The reflective layer (6) and lateral flanks (6A) of the reflective layer (6) are covered by an electrically conductive protective layer (7). The invention further relates to a method for producing an optoelectronic semiconductor chip (1). |
