发明名称 SEMICONDUCTOR DEVICE AND HEAT-DISSIPATING MECHANISM
摘要 A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.
申请公布号 US2016049350(A1) 申请公布日期 2016.02.18
申请号 US201414778684 申请日期 2014.03.03
申请人 TANAKA KIKINZOKU KOGYO K.K. 发明人 MATSUDA Kenji;SHINOZAKI Dai;MAKITA Yuichi;KUBO Hitoshi;OHSHIMA Yusuke;MATSUDA Hidekazu;TANIUCHI Junichi
分类号 H01L23/367;H05K7/20 主分类号 H01L23/367
代理机构 代理人
主权项 1. A semiconductor device comprising: a heat-generating semiconductor substrate incorporated with an integrated circuit or wirings; a silver thin film manufactured from nano-silver particles and formed by a coating method in a closely adhering manner on one surface of the semiconductor substrate; and a silicon oxidation film having a film thickness of 1 nm or more formed at an adhesion interface between the semiconductor substrate and the silver thin film.
地址 Tokyo JP