发明名称 |
SEMICONDUCTOR DEVICE AND HEAT-DISSIPATING MECHANISM |
摘要 |
A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer. |
申请公布号 |
US2016049350(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201414778684 |
申请日期 |
2014.03.03 |
申请人 |
TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
MATSUDA Kenji;SHINOZAKI Dai;MAKITA Yuichi;KUBO Hitoshi;OHSHIMA Yusuke;MATSUDA Hidekazu;TANIUCHI Junichi |
分类号 |
H01L23/367;H05K7/20 |
主分类号 |
H01L23/367 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a heat-generating semiconductor substrate incorporated with an integrated circuit or wirings; a silver thin film manufactured from nano-silver particles and formed by a coating method in a closely adhering manner on one surface of the semiconductor substrate; and a silicon oxidation film having a film thickness of 1 nm or more formed at an adhesion interface between the semiconductor substrate and the silver thin film. |
地址 |
Tokyo JP |