发明名称 ORGANIC LIGHT-EMITTING DEVICE
摘要 An OLED device including a first electrode; a second electrode; and an organic layer, the organic layer including an emission layer, a hole transport region between the first electrode and the emission layer, the hole transport region including at least one of a hole transport layer, a hole injection layer, and a buffer layer, and an electron transport region between the emission layer and the second electrode, the electron transport region including at least one of a hole blocking layer, an electron transport layer, and an electron injection layer, wherein the emission layer includes at least one host (H) and at least one phosphorescent dopant (D), an electron affinity (EA) and an ionization potential (IP) simultaneously satisfying the relationships represented by Equation (1) and Equation (2) below:;EA(D)−EA(H)≧0.2 eV  (1);IP(H)−IP(D)≧0.2 eV  (2).
申请公布号 US2016049593(A1) 申请公布日期 2016.02.18
申请号 US201514634096 申请日期 2015.02.27
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM Seulong;KIM Younsun;SHIN Dongwoo;LEE Jungsub;ITO Naoyuki
分类号 H01L51/00 主分类号 H01L51/00
代理机构 代理人
主权项 1. An organic light-emitting device, comprising: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including: an emission layer,a hole transport region between the first electrode and the emission layer, the hole transport region including at least one of a hole transport layer, a hole injection layer, and a buffer layer, andan electron transport region between the emission layer and the second electrode, the electron transport region including at least one of a hole blocking layer, an electron transport layer, and an electron injection layer, wherein the emission layer includes at least one host (H) and at least one phosphorescent dopant (D), an electron affinity (EA) and an ionization potential (IP) simultaneously satisfying the relationships represented by Equation (1) and Equation (2) below: EA(D)−EA(H)≧0.2 eV  (1)IP(H)−IP(D)≧0.2 eV  (2), and wherein the hole transport region and the electron transport region each include a layer that is adjacent to the emission layer and that includes a material having a triplet energy (T1) that is greater than that of the phosphorescent dopant.
地址 Yongin-City KR