| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound. |
| 申请公布号 |
US2016049564(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514656298 |
申请日期 |
2015.03.12 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
CHU Kunmo;MOON Changyoul;LEE Sunghee;HWANG Junsik |
| 分类号 |
H01L33/62;H01L33/00;H01L33/32 |
主分类号 |
H01L33/62 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a base substrate; and a semiconductor chip on the base substrate, the semiconductor chip including,
a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, anda bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound. |
| 地址 |
Suwon-si KR |
