| 发明名称 |
GATE STRUCTURES FOR SEMICONDUCTOR DEVICES WITH A CONDUCTIVE ETCH STOP LAYER |
| 摘要 |
One illustrative gate structure of a transistor device disclosed herein includes a high-k gate insulation layer and a work function metal layer positioned on the high-k gate insulation layer. The device further includes a first bulk metal layer positioned on the work function metal layer. The device further includes a second bulk metal layer. The first and second bulk metal layers have upper surfaces that are at substantially the same height level, and the first and second bulk metal layers are made of substantially the same material. The device further includes a conductive etch stop layer between the first and second bulk metal layers. |
| 申请公布号 |
US2016049399(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514865784 |
申请日期 |
2015.09.25 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Park Chanro;Kim Hoon;Sung Min Gyu |
| 分类号 |
H01L27/092;H01L29/49;H01L29/51;H01L29/423 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gate structure of a transistor device, comprising:
a high-k gate insulation layer; a work function metal layer positioned on said high-k gate insulation layer; a first bulk metal layer positioned on said work function metal layer; a second bulk metal layer, said first and second bulk metal layers comprising upper surfaces that are at substantially the same height level; and a conductive etch stop layer positioned between said first and second bulk metal layers. |
| 地址 |
Grand Cayman KY |
