发明名称 |
INTERCONNECT STRUCTURE |
摘要 |
An interconnect structure and fabrication method are provided. A substrate can include a semiconductor device disposed therein. A porous dielectric layer can be formed on the substrate. A surface treatment can be performed to the porous dielectric layer to form an isolation layer on the porous dielectric layer to prevent moisture absorption of the porous dielectric layer. An interconnect can be formed at least through the isolation layer and the porous dielectric layer to provide electrical connection to the semiconductor device disposed in the substrate. |
申请公布号 |
US2016049365(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201514838604 |
申请日期 |
2015.08.28 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
ZHOU MING |
分类号 |
H01L23/522;H01L23/29;H01L23/532;H01L23/31;H01L23/528 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Shanghai CN |