METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

Methods for manufacturing a semiconductor device including a field effect transistor include forming first fins protruding from a substrate including a first region and a second region, the first fins including silicon-germanium (SiGe), forming a first mask pattern to expose the first fins disposed in the second region, the first mask pattern covering the first fins disposed in the first region, oxidizing the first fins in the second region to form second fins in the second region, and forming germanium (Ge)-rich layers each disposed on a surface of a respective one of the second fins.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
forming first fins protruding from a substrate, the substrate including a first region and a second region, and the first fins including silicon-germanium (SiGe); forming a first mask pattern to expose the first fins disposed in the second region, the first mask pattern covering the first fins disposed in the first region; oxidizing the first fins in the second region to form second fins in the second region; and forming germanium (Ge)-rich layers, each of the germanium (Ge)-rich layers disposed on a surface of a respective one of the second fins.