发明名称 |
Methods of Manufacturing Semiconductor Device |
摘要 |
The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask. |
申请公布号 |
US2016049306(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201514692330 |
申请日期 |
2015.04.21 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Koh Cha-won;Kim Hyun-woo;Kim Jong-soo;Park Jin;Lee Hyung-rae |
分类号 |
H01L21/306;H01L21/027;H01L21/02;H01L21/308 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming an inner mask layer on an etching target film, the inner mask layer comprising a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by applying the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask. |
地址 |
Suwon-si KR |