Method of Tuning Work Function for A Semiconductor Device

摘要

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes forming pre-tuned-work-function (preTWF) layer over a substrate, applying an angular-doping process to the preTWF layer to change a work function of the preTWF layer (referred to as a tuned work function (TWF) layer). The angular-doping process includes injecting a doping species beam to the preTWF layer with a distribution of injecting angle and forming a metal fill layer over the TWF layer.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a metal layer over a substrate; and applying a multi-angle-doping (MAD) process to the metal layer to thereby tune a work function of the metal layer, wherein the MAD process includes injecting the doping species beams towards the metal layer at a distribution of injecting angles (DIA).