QUATERNARY LIGHT-EMITTING DIODE WITH TRANSPARENT SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

A quaternary light-emitting diode (LED) with a transparent substrate and a manufacturing method therefor. The diode comprises an AlGaInP-LED epitaxial wafer and is characterized in: the surface of a GaP layer of the AlGaInP-LED epitaxial wafer is coarsened to serve as a bonding surface, the bonding surface is plated with a thin film, then the thin film and the transparent substrate are bonded, and finally the GaAs substrate is removed. Light emitting rate of the LED can be increased.