| 摘要 |
The present invention is to provide a new-type infrared detector which has a simple structure and can be manufactured at low cost. For achieving the purpose, an infrared detector using a nanowire includes a substrate having semiconductor characteristics; a plurality of nanowires which have semiconductor characteristics, and are vertically formed on the upper surface of the substrate; a transparent electrode layer which electrically connects ends of the nanowires; and a lower electrode which is formed on the lower surface of the substrate. |
