THIN FILM TRANSISTOR AND DISPLAY PANEL USING THE SAME

摘要

A thin film transistor includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and a channel layer. The gate electrode is disposed on a substrate, and the channel layer is electrically insulated from the gate electrode. The gate insulating layer is disposed between the gate electrode and the channel layer. The source electrode and the drain electrode are electrically connected with the channel layer. The channel layer includes a front channel layer proximate to a side of the gate insulating layer, a back channel layer proximate to a side of the source electrode and an intermediate layer between the front channel layer and the back channel layer. The oxygen vacancy concentration of the front channel layer is greater than the oxygen vacancy concentration of the intermediate layer

主权项

1. A thin film transistor comprises:
a gate electrode disposed on a substrate; a channel layer electrically insulated from the gate electrode; a gate insulating layer disposed between the gate electrode and the channel layer; and a source electrode electrically connected to the channel layer; and a drain electrode electrically connected to the channel layer;
wherein the channel layer comprises a front channel layer disposed proximate to a side of the gate insulating layer, a back channel layer proximate to a side of the source electrode and the drain electrode, and an intermediate layer disposed between the front channel layer and back channel layer, and an oxygen vacancy concentration of the front channel layer is greater than an oxygen vacancy concentration of the intermediate layer.