| 发明名称 |
ION BEAM SOURCE |
| 摘要 |
An ion beam source includes a magnetic field unit including a first side facing a target object to be treated and a second side, where the first side is opened and the second side is closed, and the first side includes a plurality of magnetic pole portions arranged at predetermined intervals with an N-pole and an S-pole alternatively or with same magnetic poles and configured to form a closed loop of plasma electrons and an electrode unit arranged at a lower end of the closed loop. The ion beam source is configured to rotate the plasma electrons within a process chamber along the closed loop, to generate plasma ions from an internal gas within the process chamber, and to provide the plasma ions to the target object. |
| 申请公布号 |
US2016049277(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514923363 |
申请日期 |
2015.10.26 |
| 申请人 |
FINE SOLUTION CO., LTD. |
发明人 |
HWANG Yun Seok;HUH Yun Sung |
| 分类号 |
H01J37/30 |
主分类号 |
H01J37/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An ion beam source, comprising:
a magnetic field unit including a first side facing a target object to be treated and a second side, the first side opened and the second side closed, the first side including a plurality of magnetic pole portions arranged at predetermined intervals with an N-pole and an S-pole alternatively or with same magnetic poles and configured to form a closed loop of plasma electrons; and an electrode unit arranged at a lower end of the closed loop, wherein the ion beam source is configured
to rotate the plasma electrons within a process chamber along the closed loop,to generate plasma ions from an internal gas within the process chamber, andto provide the plasma ions to the target object. |
| 地址 |
Gyeonggi-do KR |
