发明名称 |
METHOD FOR PROCESSING SILICON-BASED WIRE OPTICAL WAVEGUIDE |
摘要 |
A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner. |
申请公布号 |
US2016047979(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201414779921 |
申请日期 |
2014.01.20 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
Yoshida Tomoya;Sakakibara Youichi;Mori Masahiko;Nishi Takashi |
分类号 |
G02B6/125;G02B6/02;G02B6/132;G02B6/134;G02B6/245 |
主分类号 |
G02B6/125 |
代理机构 |
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代理人 |
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主权项 |
1. A method for processing a silicon-based wire optical waveguide, comprising a step of preparing an optical circuit board having plural silicon-based wire optical waveguides formed through a supporting layer; a step, for an intended silicon-based wire optical waveguide that has an end portion among the silicon-based wire optical waveguides, of removing the supporting layer that is under the end portion of the silicon-based wire optical waveguide; a step of forming a protective film selectively on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and a step of implanting ions to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner. |
地址 |
Tokyo JP |