SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A three-dimensional semiconductor device may include a substrate including a cell array region, a word line contact region, and a peripheral circuit region, gate electrodes stacked on the substrate to extend from the cell array region to the word line contact region, a channel hole penetrating the gate electrodes on the cell array region and exposing an active region of the substrate, a dummy hole penetrating the gate electrodes on the word line contact region and exposing a device isolation layer provided on the substrate, and a semiconductor pattern provided in the channel hole but not in the dummy hole.

主权项

1. A three-dimensional semiconductor device, comprising:
a substrate including a cell array region, a word line contact region, and a peripheral circuit region; gate electrodes stacked on the substrate to extend from the cell array region to the word line contact region; a vertical channel structure penetrating the gate electrodes on the cell array region and being electrically connected to the substrate; a semiconductor pattern disposed between the vertical channel structure and the substrate; and a dummy pillar penetrating the gate electrodes on the word line contact region and being electrically separated from the substrate, wherein the dummy pillar is provided to penetrate a lowermost one of the gate electrodes.