MEMORY CELL HAVING ISOLATED CHARGE SITES AND METHOD OF FABRICATING SAME

摘要

Memory cells having isolated charge sites and methods of fabricating memory cells having isolated charge sites are described. In an example, a nonvolatile charge trap memory device includes a substrate having a channel region, a source region and a drain region. A gate stack is disposed above the substrate, over the channel region. The gate stack includes a tunnel dielectric layer disposed above the channel region, a first charge-trapping region and a second charge-trapping region. The regions are disposed above the tunnel dielectric layer and separated by a distance. The gate stack also includes an isolating dielectric layer disposed above the tunnel dielectric layer and between the first charge-trapping region and the second charge-trapping region. A gate dielectric layer is disposed above the first charge-trapping region, the second charge-trapping region and the isolating dielectric layer. A gate electrode is disposed above the gate dielectric layer.

主权项

1. A nonvolatile charge trap memory device, comprising:
a substrate having a channel region, a source region and a drain region; and a gate stack disposed above the substrate, over the channel region, wherein the gate stack comprises:
a tunnel dielectric layer disposed above the channel region;a first charge-trapping region and a second charge-trapping region, the regions disposed above the tunnel dielectric layer and separated by a distance;an isolating dielectric layer disposed above the tunnel dielectric layer and between the first charge-trapping region and the second charge-trapping region;a gate dielectric layer disposed above the first charge-trapping region, the second charge-trapping region and the isolating dielectric layer; anda gate electrode disposed above the gate dielectric layer.