HYBRID CONTACTS FOR COMMONLY FABRICATED SEMICONDUCTOR DEVICES USING SAME METAL

摘要

A non-planar semiconductor structure, for example, a dual FinFET structure, includes a n-type semiconductor device and a p-type semiconductor device. Metal-insulator-semiconductor (MIS) contacts provide electrical connection to the n-type device, and metal-semiconductor (MS) contacts provide electrical connection to the p-type device. The metal of both MIS and MS contacts is a same n-type work function metal. In one example, the semiconductor of the MIS contact includes epitaxial silicon germanium with a relatively low percentage of germanium, the insulator of the MIS contact includes titanium dioxide, the semiconductor for the MS contact includes silicon germanium with a relatively high percentage of germanium or pure germanium, and the metal for both contacts includes a n-type work function metal.

主权项

1. A method, comprising:
providing a starting semiconductor structure, the structure comprising a semiconductor substrate, at least one raised semiconductor structure coupled to the substrate having at least one region for a n-type semiconductor device and at least one region for a p-type semiconductor device, the regions separated by isolation material, at least one dummy gate structure over each of the regions and a conformal layer of a spacer material over the starting structure; creating a metal-insulator-semiconductor (MIS) contact for the n-type semiconductor device; and creating a metal-semiconductor (MS) contact for the p-type semiconductor device, wherein the metal is a same metal as the MIS contact.