发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING LOW TEMPERATURE POLY-SILICON FILM, AND LOW TEMPERATURE POLY-SILICON FILM |
摘要 |
Disclosed are a method and an apparatus for manufacturing low temperature poly-silicon film, and a low temperature poly-silicon film. The method includes: providing a substrate; forming an amorphous silicon film; applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film. The low temperature poly-silicon film manufactured by the above method and apparatus has a greater size of the crystalline grain and a larger electronic mobility than in the existing technology. |
申请公布号 |
US2016049300(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201414395915 |
申请日期 |
2014.08.26 |
申请人 |
Shenzhen China Star Optoelectronics Technology Co. , Ltd. |
发明人 |
Zhang Longxian;Yu Wei |
分类号 |
H01L21/02;H01L29/04 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing low temperature poly-silicon film, comprising:
providing a substrate; forming an amorphous silicon film; applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film. |
地址 |
Shenzhen, Guangdong CN |