发明名称 METHOD AND APPARATUS FOR MANUFACTURING LOW TEMPERATURE POLY-SILICON FILM, AND LOW TEMPERATURE POLY-SILICON FILM
摘要 Disclosed are a method and an apparatus for manufacturing low temperature poly-silicon film, and a low temperature poly-silicon film. The method includes: providing a substrate; forming an amorphous silicon film; applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film. The low temperature poly-silicon film manufactured by the above method and apparatus has a greater size of the crystalline grain and a larger electronic mobility than in the existing technology.
申请公布号 US2016049300(A1) 申请公布日期 2016.02.18
申请号 US201414395915 申请日期 2014.08.26
申请人 Shenzhen China Star Optoelectronics Technology Co. , Ltd. 发明人 Zhang Longxian;Yu Wei
分类号 H01L21/02;H01L29/04 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method for manufacturing low temperature poly-silicon film, comprising: providing a substrate; forming an amorphous silicon film; applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film.
地址 Shenzhen, Guangdong CN