Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers

摘要

A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.

主权项

1. A method comprising:
forming an insulation layer in a substrate, with portions of the substrate in, and separate from each other by, the insulation layer; removing the portions of the substrate to form recesses in the insulation layer; epitaxially growing a semiconductor material in the recesses to form semiconductor re-growth regions, wherein top ends of the semiconductor re-growth regions form pyramids; and epitaxially growing a III-V compound semiconductor film starting from the pyramids.