| 发明名称 |
VARIABLE CHANNEL STRAIN OF NANOWIRE TRANSISTORS TO IMPROVE DRIVE CURRENT |
| 摘要 |
A semiconductor device includes a nanowire structure and a stressor. The nanowire structure includes a first channel section and a second channel section. The stressor subjects the first channel section to a first strain level and the second channel section to a second strain level greater than the first strain level. The difference between the second strain level and the first strain level is less than the second strain level. |
| 申请公布号 |
US2016049472(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514923532 |
申请日期 |
2015.10.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
YU TSUNG-HSING;HSU YEH;LIU CHIA-WEN;COLINGE JEAN-PIERRE |
| 分类号 |
H01L29/06;H01L29/66;H01L29/78 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a nanowire structure including a first channel section and a second channel section; and a stressor subjecting the first channel section to a first strain level and the second channel section to a second strain level greater than the first strain level, wherein the difference between the second strain level and the first strain level is less than the second strain level. |
| 地址 |
Hsinchu TW |
