发明名称 INTEGRATED DEVICE COMPRISING A HEAT-DISSIPATION LAYER PROVIDING AN ELECTRICAL PATH FOR A GROUND SIGNAL
摘要 Provided herein is an integrated device that includes a substrate, a die, a heat-dissipation layer located between the substrate and the die, and a first interconnect configured to couple the die to the heat-dissipation layer. The heat-dissipation layer may be configured to provide an electrical path for a ground signal. The first interconnect may be further configured to conduct heat from the die to the heat-dissipation layer. The integrated device may also include a second interconnect configured to couple the die to the substrate. The second interconnect may be further configured to conduct a power signal between the die and the substrate. The integrated device may also include a dielectric layer located between the heat-dissipation layer and the substrate, and a solder-resist layer located between the die and the heat-dissipation layer.
申请公布号 US2016049378(A1) 申请公布日期 2016.02.18
申请号 US201414462265 申请日期 2014.08.18
申请人 QUALCOMM Incorporated 发明人 Song Young Kyu;We Hong Bok;Kim Dong Wook;Hwang Kyu-Pyung
分类号 H01L23/00;H01L23/367 主分类号 H01L23/00
代理机构 代理人
主权项 1. An integrated device comprising: a substrate; a die; a heat-dissipation layer disposed on a surface of the substrate and located between the substrate and the die; a first interconnect configured to couple the die to the heat-dissipation layer, wherein the heat-dissipation layer is configured to provide an electrical path for a ground signal and the heat-dissipation layer is adjacent to the first interconnect; and a second interconnect configured to couple the die to the substrate, wherein the second interconnect is electrically isolated from the heat-dissipation layer by a solder-resist layer.
地址 San Diego CA US
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