THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.

主权项

1. A three-dimensional semiconductor device comprising:
a structure including a plurality of interconnection patterns and interlayer molds which are stacked alternately and vertically on a substrate; a plurality of active patterns penetrating the structure; and a plurality of sidewall molds spaced apart from the active patterns and disposed on sidewalls of the interconnection patterns, each of the sidewall molds disposed between the interlayer molds vertically adjacent to each other and being in contact with the adjacent ones of the interlayer molds, wherein the sidewall molds are formed of a different insulating material from the interlayer molds.