发明名称 METHODS OF FABRICATING BEOL INTERLAYER STRUCTURES
摘要 Methods are provided for fabricating an interlayer structure useful in, for instance, providing BEOL interconnect for circuit structures. The method includes, for instance, providing an interlayer structure, including: providing an uncured insulating layer above a substrate structure; forming an energy removal film over the uncured insulated layer; forming at least one opening through the energy removal film and extending at least partially into the uncured insulating layer; and applying energy to cure the uncured insulating layer, establishing a cured insulating layer, and decomposing in part the energy removal film, establishing a reduced thickness, energy removal film over the cured insulating layer, the interlayer structure including the cured insulating layer, and the applying energy decreasing an aspect ratio(s) of the one opening(s). In one implementation, the uncured insulating layer includes porogens which also decompose partially during applying energy to further improve the aspect ratio(s).
申请公布号 US2016049327(A1) 申请公布日期 2016.02.18
申请号 US201414459444 申请日期 2014.08.14
申请人 GLOBALFOUNDRIES INC. 发明人 SINGH Sunil Kumar;SRIVASTAVA Ravi Prakash;TANG Teck Jung;ZALESKI Mark Alexander
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method comprising: providing an interlayer structure comprising: providing an uncured insulating layer above a substrate structure;forming an energy removal film over the uncured insulating layer;forming at least one opening through the energy removal film and extending at least partially into the uncured insulating layer; andapplying energy to cure the uncured insulating layer, establishing a cured insulating layer, and decompose in part the energy removal film, establishing a reduced energy removal film over the cured insulating layer, the interlayer structure comprising the cured insulating layer and the applying energy decreasing an aspect ratio(s) of the at least one opening.
地址 Grand Cayman KY