发明名称 |
SELF-ALIGNED GATE LAST III-N TRANSISTORS |
摘要 |
Techniques related to III-N transistors having self aligned gates, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include a polarization layer between a raised source and a raised drain, a gate between the source and drain and over the polarization layer, and lateral epitaxial overgrowths over the source and drain and having and opening therebetween such that at least a portion of the gate adjacent to the polarization layer is aligned with the opening. |
申请公布号 |
WO2016024960(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
WO2014US50826 |
申请日期 |
2014.08.13 |
申请人 |
INTEL CORPORATION |
发明人 |
THEN, HAN WUI;DASGUPTA, SANSAPTAK;SUNG, SEUNG MOON;GARDNER, SANAZ;RADOSAVLJEVIC, MARKO;CHAU, ROBERT |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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