PREPARATION METHOD AND PREPARATION APPARATUS FOR LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM, AND LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM

摘要

Provided are a preparation method for a low-temperature polycrystalline silicon thin film, a preparation apparatus for a low-temperature polycrystalline silicon thin film, and a low-temperature polycrystalline silicon thin film. The preparation method for a low-temperature polycrystalline silicon thin film comprises: providing a substrate; forming an amorphous silicon thin film; applying different temperatures to different regions of the amorphous silicon thin film by means of an excimer laser technology respectively to turn the amorphous silicon thin film into a molten state; and crystallizing the amorphous silicon thin film starting from a lower-temperature region to a higher-temperature region so as to form the low-temperature polycrystalline silicon thin film. The low-temperature polycrystalline silicon thin film prepared by means of the preparation method for a low-temperature polycrystalline silicon thin film and the preparation apparatus for a low-temperature polycrystalline silicon thin film has greater crystal grains and a higher electron mobility.