INTEGRATED CIRCUITS AND FABRICATING METHOD THEREOF

摘要

Provided is an integrated circuit including a nano-sheet FET. The integrated circuit includes: multiple first nano-sheet field-effect transistors (FET); and multiple second nano-sheet FETs. A nano-sheet of any one of the first nano-sheet FETs includes not more than 30% of Si, the first nano-sheet FETs define a critical speed path, a nano-sheet of any one of the second nano-sheet FETs includes not more than 30% of Si, the second nano-sheet FETs define a non-critical speed path, and one of the first nano-sheet FETs is faster than one of the second nano-sheet FETs.