| 摘要 |
The present invention provides a method for processing a photolithographic substrate within a vacuum chamber. The method comprising the steps of cooling the photolithographic substrate to a target temperature before the photolithographic substrate is processed within the vacuum chamber. At least one processing gas is introduced into the vacuum chamber. After the photolithographic substrate is at the target temperature, a plasma is ignited from the processing gas wherein the photolithographic substrate is processed using the plasma. Upon completion of the processing, the photolithographic substrate is unloaded from the vacuum chamber. |
