发明名称 FePt系スパッタリングターゲット及びその製造方法
摘要 An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.
申请公布号 JP5863782(B2) 申请公布日期 2016.02.17
申请号 JP20130514450 申请日期 2013.01.11
申请人 田中貴金属工業株式会社 发明人 宮下 敬史;後藤 康之;山本 孝充;櫛引 了輔;青野 雅広;西浦 正紘
分类号 C23C14/34;B22F3/14;C22C1/05;C22C5/04;G11B5/64;G11B5/851 主分类号 C23C14/34
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