| 摘要 |
A method for producing a phase shift mask includes a step of forming a second mask (RP2) having a predetermined aperture pattern in such a manner that: a light-blocking layer (13) exposed on a surface and pattern apertures is covered; and an etching stopper layer (12) and a phase shift layer (11) that are exposed on the pattern apertures are not covered in light-blocking regions and are covered in phase-shift regions. |
