| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a silicon film on a workpiece with a recessed portion capable of improving throughput in an embedding step and exerting excellent productivity even in manufacture of a semiconductor integrated circuit device which frequently uses the embedding step.SOLUTION: A method for depositing a silicon film on a workpiece 1 with a recessed portion 3 comprises the steps of: forming a seed layer 7 on a surface of the workpiece 1 with the recessed portion 3 and a surface of the bottom of the recessed portion 3 by supplying an aminosilane-based gas onto the workpiece 1 with the recessed portion 3; and forming a silicon film on the seed layer 7 by supplying a silane-based gas not containing an amino group on the workpiece 1 with the recessed portion 3. |
