| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device that can improve the operating efficiency while maintaining pinch-off characteristics and to provide a method of manufacturing the same. <P>SOLUTION: A compound semiconductor device comprises: a substrate 11; an electron transit layer 12 that is provided on the substrate 11; an electron supply layer 13 that is provided on the electron transit layer 12; a source electrode 15s and a drain electrode 15d that are provided on the electron supply layer 13; and a first gate electrode 15g-1 and a second gate electrode 15g-2 that are provided between the source electrode 15s and the drain electrode 15d, above the electron supply layer 13. The work function of the first gate electrode 15g-1 is lower than that of the second gate electrode 15g-2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
