| 摘要 |
It is required that the deterioration of the verticality of a spacer formed in a multilayered film in part of an object is prevented. A method of etching a multilayered film includes a process of etching the multilayered film by generating plasma in the process chamber of a plasma process apparatus. In the process, a first process gas which includes hydrogen gas, hydrogen bromide gas, fluorine containing gas, hydrocarbon gas, fluorine hydrocarbon gas and fluorine carbon gas, is supplied from a first supply part for supplying a gas to the center region of the object and a second supply part for supplying a gas to the outside region of a corresponding center region. A second process gas which includes hydrocarbon gas and fluorocarbon gas, is supplied from one of the first supply part and the second supply part. The first process gas and the second process gas are excited. |
