| 摘要 |
An embodiment of the present invention provides a thin film transistor array substrate which comprises: a gate line formed along a first direction; a data line formed along a second direction crossing the first direction; a power line arranged along the second direction on the identical layer to the data line, and arranged apart from the data line; a first thin film transistor containing a first gate electrode connected to the gate line, a first active layer overlapped with the first gate electrode, and a first source electrode and a first drain electrode connected to both ends of the first active layer; a light shielding pattern formed on the substrate; a second thin film transistor containing a second active layer formed on a buffer film covering the light shielding pattern and overlapped with the light shielding pattern, a second gate electrode formed on the gate insulation later partially covering the second active layer and connected to the first thin film transistor, and a second source electrode and a second drain electrode formed on an interlayer insulation film covering the second active layer and the second electrode and connected to both ends of the second active layer; and a power bridge pattern formed along the first direction on the substrate, and placed apart from the light shielding pattern, and crossing the data line. |
