Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
申请公布号
EP2984685(A2)
申请公布日期
2016.02.17
申请号
EP20140716970
申请日期
2014.03.31
申请人
KONINKLIJKE PHILIPS N.V.
发明人
MORAN, BRENDAN JUDE;DE SAMBER, MARC ANDRE;BASIN, GRIGORIY;SWEEGERS, NORBERTUS ANTONIUS MARIA;BUTTERWORTH, MARK MELVIN;VAMPOLA, KENNETH;MAZUIR, CLARISSE