Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer

摘要

A semiconductor light emitting device includes: an upper growth layer (39) including a light emitting layer (32); a transparent substrate (10) through which a radiant light from the light emitting layer passes; and a foundation layer (23) provided between the upper growth layer (39) and the transparent substrate (10), the foundation layer (23) having a surface-controlling layer (22) and a bonding layer (20) bonded with the transparent substrate (10). The surface-controlling layer (22) is made of compound semiconductor including at least Ga and As. The upper growth layer (39) is formed on an upper surface of the surface-controlling layer (22). A lattice constant difference at an interface between the surface-controlling layer (22) and the upper growth layer (39) is smaller than that at an interface (15) between the bonding layer (20) and the transparent substrate (10).