| 摘要 |
The present invention provides a processing method which properly eliminates low-dielectric-constant insulation films and a metallic pattern on a street. The method comprises: a mask process of covering a surface of a device (17a), formed on an object (11) to be processed, by a surface protection member (23) and exposing the street (15); a wet blasting process of dispersing abrasive grains in an etching liquid, which dissolves the metallic pattern, and spraying the etching liquid together with compressed gas onto the object to be processed to eliminate the low-dielectric-constant insulation films and the metallic pattern on the street so as to expose a semiconductor substrate (13); and a division process of performing dry etching in the object to be processed, in which the semiconductor substrate is exposed by the wet blasting process, to divide the object to be processed along the street. |
